A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• produced by GaAs anodization in NaCl electrolyte are similar to those previously observed in GaAs samples with the same carrier concentration anodized in HCl electrolyte [1]. This observation corroborates the results obtained from other III–V semiconductors, which state that the etching behavior depends

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• reflected by the top surface of the nanowire, thus increasing total reflection. Anttu et al. suggest another possible explanation for the optimal cross section value [19]. In their work on III–V semiconductors nanowire arrays, they observed the presence of optimum, bandgap-dependent nanowire diameter values

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• ; nanostructured materials; thin films; Introduction Diluted magnetic semiconductors (DMS) are very promising materials for spintronic devices, because DMS offer the combination of magnetic and semiconducting properties. Currently, the most commonly studied DMS systems are those based on III–V semiconductors

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• , Si modulation doping of adjacent dielectric layers based on nitrides [11] and oxides [12], in analogy to modulation doping of III–V semiconductors, were shown to be an alternative to conventional impurity doping. It would be ideal to achieve electron- (n-) or hole- (p-) type conductivity in usn-Si

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• for application in solar cells owing to their high absorption, direct bandgap, high carrier mobility and well-developed synthesis techniques [5][6][7][8][9]. Among the group III–V semiconductors, GaAs is one of the most intensively studied materials and has a suitable bandgap energy value for solar

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for

• sample in order to make RAS control possible. Keywords: broad area semiconductor lasers (BAL); dry-etch monitoring (RIE); precise etch depth control; reflectance anisotropy spectroscopy (RAS); III–V semiconductors; Introduction Reflectance anisotropy/difference spectroscopy (RAS/RDS) [1][2][3][4][5] is

• -etch monitoring. Results and Discussion Experimental details Most of the III–V semiconductors under normal conditions feature optically isotropic bulk material due to their cubic crystal structure and consequently should not generate a RAS signal under normal incidence [1]. Nevertheless, optical

Inorganic Janus particles for biomedical applications

• Isabel Schick,
• Steffen Lorenz,
• Dominik Gehrig,
• Stefan Tenzer,
• Wiebke Storck,
• Karl Fischer,
• Dennis Strand,
• Frédéric Laquai and
• Wolfgang Tremel

Beilstein J. Nanotechnol. 2014, 5, 2346–2362, doi:10.3762/bjnano.5.244

• nanoparticles are core/shell structures, in particular core/shell structures of fluorescent II–IV and III–V semiconductors, typically transition metal-chalcogenides, -phosphides, and -arsenides [10]. The epitaxial combination of a 0D spherical quantum dot with a 1D rod-like shell of a semiconductor leads to

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• has been one of the main drawbacks of this material. It has placed Si away from many optical applications such as lasers and LEDs, in favor of the more expensive and less environmental friendly III–V semiconductors. While radiative recombination on compound semiconductors is an efficient process, in